Topological Solitons in Indium Chains on Si(111) Surfaces

Based on scanning tunneling microscopy and first-principles theoretical studies, we characterize the precise atomic structure of a topological soliton in In chains grown on Si(111) surfaces. Once created, these solitons have very low mobility, even though the activation energy is only about 20 meV; the sluggish nature is attributed to the exceptionally low attempt frequency for soliton migration.

Electronically Phase-Separated Ground States in Defective Indium Atom Wires on Silicon

We demonstrate that the incorporation of vacancy defects into monatomic indium wires on n-type Si(111) can stabilize electronically phase-separated ground states . The present results extend the realm of electronic phase separation from strongly correlated d-electron materials typically in bulk form to weakly interacting sp-electron systems in reduced dimensionality.

Structure and charge inhomogeneity at the surface of superconducting BaFe2−xCoxAs2

The structure and electronic property at the cleaved 001 surfaces of the newly discovered pnictide superconductors BaFe2−xCoxAs2 with x ranging from 0 to 0.32 are systematically investigated by scanning tunneling microscopy. Charge inhomogeneity is observed at this surface associated with an energy gap of about 30 meV for all the compounds.

Low dimensional Material UHV-Cluster system laboratory

  • The main goal of our laboratory is to develop the electronic state manipulating technology of low-dimensional materials device and to research novel quantum materials application, especially in future to design quantum computer. The electronic excited states and superconductor of low-dimensional materials were studied by scanning tunnel microscopy (STM) and Josephson junction devices. The preparation technology of novel low-dimensional functional materials were developed and fabricated by ultra high vacuum (UHV)-Cluster deposition system. Following advanced growth, nano-fabricating and microscale structure-electronic state observation, we will attempt to promote novel topological-quantum computing device design and research.