H. Zhang, J.-H. Choi, Y. Xu, X. X. Wang, X. F. Zhai, B. Wang, C. G. Zeng, J.-H. Cho, Z. Y. Zhang, J. G. Hou, Atomic structure, energetics, and dynamics of topological solitons in indium chains on Si(111), Phys. Rev. Lett. 106, 026801 (2011)
H. Zhang, J. Dai, Y. J. Zhang, D. R. Qu, H. W. Ji, G. Wu, X. F. Wang, X. H. Chen, B. Wang, C. G. Zeng, J. L. Yang, J. G. Hou, Root2xRoot2 structure and charge inhomogeneity at the surfaces of superconducting BaFe2-xCo2As2 (x = 0-0.32), Phys. Rev. B 81, 104520 (2010)
Q. Fu, W. X. Li, Y. X. Yao, H. Y. Liu, H. Y. Su, D. Ma, X. K. Gu, L. M. Chen, Z. Wang, H. Zhang, B. Wang, X. H. Bao, Interface-confined ferrous centers for catalytic oxidation, Science 328, 1141 (2010)
W. Wang, H. Zhang, W. H. Wang, A. D. Zhao, B. Wang, J. G. Hou, Observation of water dissociation on nanometer-sized FeO islands grown on Pt(111), Chem. Phys. Lett. 500, 76 (2010)
H. Zhang, Y. Y. Li, B. Li, X. M. Fang, H. Ji, B. Wang, C. G. Zeng, J. G. Hou, Templated growth of quasi one dimensional molecular structures on Si(111)-(4×1)-In surface, Surf. Sci. 603, L70 (2009)
H. B. Lu, X. Y. Zhang, H. Zhang, Influence of the relaxation of Maxwell-Wagner- Sillars polarization and dc conductivity on the dielectric behaviors of nylon 1010, J. Appl. Phys. 100, 054104 (2006)
H. B. Lu, X.Y. Zhang, B. He, H. Zhang, Electrode polarization for Nylon 1010 with dielectric relaxation spectroscope, J. Appl. Polym. Sci. 102, 3590 (2006)
Patents
1. H. Zhang, J. Fan, "Integrated centralized vacuum interconnection system device", U.S. Patent, Application Number: 18619171
2. 张汇、樊金泽 “一种组合集中真空互联系统装置” 发明专利授权 ZL 202311259008.5
3. 张汇、樊金泽 “一种新型变轨真空恒温轨道运输装置及实施方法” 发明专利授权 ZL 202310708313.1
4. 曾长淦、张汇、张天乙 “扫描卡西米尔力显微镜及使用方法” 发明专利申请 202110855322.4
5. 王秀霞、张汇、刘雨辰、彭金兰、彭芳芳 “基于卡西米尔效应的测量探针的制备方法及探针” 发明专利申请 202210849497.9
6. 张汇、汪逸凡、施至刚 “可分离式真空互联系统” 发明专利授权 ZL 201811186364.8
7. 张汇、罗超杰 “薄膜制备系统,已申请的发明专利” 发明专利申请 202111184800.X
8. 张汇、马小栋 “基于双表面拓扑超导特性的约瑟夫森器件及制备方法” 发明专利授权 ZL 201810153616.0
9. 张汇、汪逸凡、施至刚 “可分离式真空互联系统” 实用新型专利授权ZL 201821651673.3
10. 张汇、王炜华、纪永飞、王兵、侯建国 “基于硅-分子复合体系单分子负微分电阻器件及制备方法” 发明专利授权 ZL 201310020439.6