|
Before 2003 [2] Zhuxi Fu, Bixia Lin and Guihong Liao “The Effect of Zn Buffer layer on Growth and Luminescent Properties of ZnO Films Deposited on Si Substrates”, J. Crystal Growth, 1998, 193: 316 [3] Fu Zhuxi, Guo Changxin, Lin Bixia and Liao Guihong ： “Cathodoluminescence of ZnO films” Chinese Physics Letter . 1998, 15 (6): 457 [4] Fu Zhuxi, Lin Bixia, Liao Guihong : “The Photoelectric Effect of ZnO/SiHeterostructure” Chinese Physics Letters 1999, 16 (10): 753 [5] GUO Chang-Xin, FU Zhu-Xi, SHI Chao-Shu .: “Ultraviolet Super-Radiation Luminescence of Sputtering ZnO Film Under Cathode-Ray Excitation at room Temperature” Chinese Physics Letters . 1999, 16 (2): 146 [6] Shi Chaoshu, Fu Zhuxi et al.: “UV Luminescence and Spectral Properties of ZnO Films Deposited on Si Substrates” ， Journal of Electron Spectroscopy and Related Phenomena , 1999 ， Vol. 101/103: 629 [7] Lin Bixia, Fu Zhuxi, Jia Yunbo, Liao Guihong: “The Defect Photoluminescence of Undoping ZnO Films and Its Dependence on Annealing Conditions” ， J. Electrochemical Society, 2001, 148 (3): G110 [8] Zhang Guo-Bin, Shi Chao-Shu , Han Zheng-Pu, Shi Jun-Yan, Fu Zhu-Xi, M.Kiem, G.Zimmerer: "Photoluminescent Properties of ZnO Films Deposited on Si Substrates" Chinese Physics Letters , 2001, Vol. 18 (3): 441 [9] Liu Ci-Hui, Chen Yu-Lin, Lin Bi-Xia , Zhu Jun-Jie , Fu Zhu-Xi, et al: "Electrical Properties of ZnO/Si Heterostructure ", Chinese Physics Letters 2001, 18 (8) ： 1108 [10] XU Pang-Shou, SUN Yu-Ming, Shi Chao-Shu. “Native Point Defect States in ZnO”. Chinese Physics Letters, 2001, 18 (9):1252-1253 [11] Sun Yuming Xu Pangshou, , Shi Chaoshu. “A FP-LMTO study on the native shallow donor in ZnO”. Journal of Spectroscopy and Related Phenomena, 2001, 114/116: 1123-1125 [12] XU Pang-Shou, SUN Yu-Ming, Shi Chao-Shu. “Electronic structure of ZnO anf its defects”, Science in China (Series A), 2001, 44 (9): 1174-1181 [13] Zhang G.B., Zhou H.J., Shi C.S., Fu Z.X . , “Temperature and Time Dependence of Emission Properties of ZnO Films Deposited on Si Substrates”. Journal of Spectroscopy and Related Phenomena,2002 [14] Zhuxi Fu, Bixia Lin , Jie Zu: “Photoluminescence and Structure of the ZnO Films Deposited on Si Substrates by Metal-Organic Chemical Vapor Deposition”, Thin Solid Films ， 2002, 402 （ 1-2 ）： 302-306 [15] Guo Chang-xin, Fu Zhu-xi, Shi Chao-shu. “Electron Pumped Ultraviolet Super-radiation Luminescence from Sputtering ZnO Film”, International Workshop on Zinc Oxide , 1999, October, 7-8 [16] Gang Xiong , John Wikinson, K.B.Ucer, R.T.Williams; Zhuxi Fu, Bixia Lin : "ZnO Film Luminescence" deliver in USA at 2001 [17]Xia Sun, Zhuxi Fu, Ziqin Wu , Multifractal analysis and scaling range of ZnO AFM images, Physica A 2002 ， 311 ， 327 [18] Xia Sun, Zhuxi Fu, Ziqin Wu, Fractal Processing of AFM Images of Rough ZnO films, Materials Characterization ， 2002 ， 48: 169-175 [19] Guo Chang-xin,Fu zhu-xi ,Shi Chao-shu: "Superlinear Increase Phenomenon of UV Luminescence of ZnO Film under Cathodoluminescent Excitation" Chinese Journal of Luminescence. 1998, Vol. 19(3): 239 [20] Fu Zhu-xi,Lin Bi-xia,Guo Chang-xin,Liao Gui-hong:"Luminescent Spectrum of ZnO Films Deposited on Si Substrates", Chinese Journal of Semiconductors, 1999, l.20 (9): 827 [21] Fu Zhu-xi. "Resonant Cavity Enhanced Photodetectors"，Physics，1999，28 (5)： 282-285 [22] Fu Zhu-Xi,Wu Zi-qing."Cathodoluminescence Analysis and its Applications in New Materials". Physics，2000，29（2）：96-99 [23] Sun Xia,Xiong Gang,Fu Zhu-xi,Wu Zi-qing:"Multifractal Spectra of Atomic force Microscope images of ZnO film",Phys.Lett. 2000，49 (5): 854 [24] Xiaoliang Xu，Chaoshu shi： “ Nanoosize crystaline structured ZnO and it's uvlaser”, P R China ,2000.20(4): 356 [25] Lin Bia_xia,Fu Zu-Xi, Liao Gui-hong: "Growth and CL/PL Emission Properties of ZnO Films" Chinese Journal of Luminescence"， 2001, Vol. 22 (2): 167 [26] Fu Zhu-xi,Lin Bi-xia,Zhu jie,Jia Yun-bo,Liu Li-ping,Peng Xiao-tao::"MOCVD Growth of ZnO Films and Their Luminescence Properties"，Chinese Journal of Luminescence， 2001, 22 (2): 119 [27] Zhang Guo-bin,Shi Chao-shu,Han zheng-fu,Shi Jun-yan,Lin Bi-xia, Kirm M, Zimmerer G: "Photoluminescence Properties of ZnO Films Deposited on Si Substrates " Chinese Journal of Luminescence 2001，Vol. 22 (2): 157 [28] Liu Ci-hui,Zhu Jun-jie,Chen Yu-lin,Lin Bi-xia,Fu Zhu-xi,et al. :"Deep Level of ZnO/p-Si Heterostructure and Its Influence on the Photoluminescence" Chinese Journal of Luminescence，2001，Vol. 22 (3) [29] Sun Xia,Xiong Gang,Fu Zhu-Xi,Wu Zi-qing:"Calculation of Multifractal Spectra of film Growth",Chinese Journal of Computational Physics.2001,18(3):247 [30] Zhang Bin,Lin Bi-xia,Fu Zhu-xi,Shi Chao-shu："Preparation of ZnO Thin Films by Electron Beam evaporation" Chinese Journal of Luminescence" ,2001，Vol. 22 (3) 309 [31] Lin Bi-xia,Fu Zhu-xi,Jia Yun-bo ,Liao Gui-hong:"the Ultraviolet and Green Luminescence Centers in Undoped Zinc Oxide Films"Acta Physica Sinica 2001 50（11），2208-2211 [32] Shi Chao-shu，Qi Ze-ming， “Ultraviolet exciation spectrum of ZnO based on Si ” ， UsTransaction of USTC .2000 30 ： 80-83 [33] Lin Bi-xia,Fu Zhu-xi,Liu Ci-hui,Liao Gui-hong,Zhu Jun-jie,Duan Li,"the Luminescence of Wide-gap Semiconductor of Zinc Oxide Films and its p-n Junction Properties", Research&Progress of SSE，2002 22（4），417-420 [34] Fu Zhu-xi,Lin Bi-xia,He Yi-ping,Liao Gui-hong:"Reflection and Transmission Spectra of ZnO Films and Its Band-gap Structure"，Chinese Journal of Luminescence，2002 23（6）559-562 [35] Duan Li,Lin Bi-xia,Fu Zhu-xi:"Development of p-type Doping and p-n Junctions of ZnO Film"，Physics，2003 32（1），27-31 2004年 [36] ZHAO Guo-liang, LIN Bi-xia, HONG Liang, MENG Xiang-dong,FU Zhu-xi, Structural and Luminescent Properties of ZnO Thin Films Deposited by Atmospheric Pressure Chemical Vapour Deposition, Chinese Physics Letters, 2004, 21 (7): 1381-1383 [37] Fu Zhu-xi, Lin Bi-xia， “ Important problem of studying photo-electronic ZnO films” ， Chinese Journal of Luminescence， 2004 ， 25 （ 2 ） 117-122 [38]Bixia Lin, Fu Zhu-xi，Liao Gui-hong， “ Influence of oxygen on ultraviolet emission of ZnO films” ， Chinese Journal of Luminescence ， 2004 ， 25 （ 2 ） 129-133 [39] Liu Ci-hui，Lin Bi-xia，Wang Xiao-ping，Zhu Jun-jie，Zhong Shen，Fu Zhu-xi， “ Thermal anneal effect on characteristics of surface morphology and ellipsometric of ZnO films” ， Chinese Journal of Luminescence， 2004 ， 25 （ 2 ） 151-155 [40] Fu Zhu-xi，Lin Bi-xia，He Yi-ping，Liao Gui-hong, Optical constants of ZnO thin films, Chinese Journal of Luminescence， 2004 ， 25 （ 2 ） 159-162 [41] Duan Li，Lin Bi-xia，Zhu Jun-jie，Wang jin，Zhang Hu-fei，Fu Zhu-xi， “Effect of the Intrinsic Defects in ZnO∶Al Films on Photoemission” ， Chinese Journal of Luminescence， 2004 ， 25 （ 3 ） 309-312 [42] Zhu Jun-jie，Liu Ci-hui，Lin Bi-xia，Xia Jia-chun，Fu Zhu-xi， “ Chinese Journal of Luminescence ” ，Chinese Journal of Luminescence， 2004 ， 25 （ 3 ） 317-319 [43] Shi Chao-shu，Zhang Guo-bing，Chen Yong-hu，Lin Bi-xia，Sun Yu-ming，Xu Peng-shou，Fu Zhu-xi,"Special Spectroscopic Properties of ZnO Thin Film and Its Mechanisms ", Chinese Journal of Luminescence， 2004 ， 25 （ 3 ） 272-276 [44] Wang Li-yu, Xie Jia-chun, Lin Bi-xia,Wang Ke-yan, Fu Zhu-xi“ Study on n-ZnO/p-Si Heterojunction UV Enhanced Photoelectric Detectors”ELECTRONIC COMPONENTS & MATERIALS , 2004 ， Vol.23, 42-44 [45]ZHU Jun-jie, LIN BI-xia, SUN Xian-kai, ZHEN Hai-wu,YAO Ran, Fu Zhu-xi, Studies of the Heteroepitaxial SiC Films on the Si Substrates, Jounal of Crystal Growth, 2004,33(4):545-548 [46] Zhu Jun jie, L in B ix ia, Yao Ran, Zhao Guo liang and Fu Zhux i , Hetero-Ep itaxy ZnO/SiC/Si by LP-MOCVD3 , Chinese Journal of Semiconductors， 2004 ， 25 （ 12 ）： 1668-1671 2005年 [47]LEI Huan ， LIU Ci-hui, LIN Bi-xia, FU Zhu-xi, “ Influence of Interface Charge on Electrical Properties of ZnO/Si Heterojunction ”, Chinese Physics Letters, 2005, 22(1):185-197 [48] Yang Zhang, Bixia Lin, Xiankai Sun, and Zhuxi Fu a) ， Temperature-dependent photoluminescence of nanocrystalline ZnO thin films grown on Si (100) substrates by sol-gel process ， Applied Physics Letters, 2005, 86:131910-131912 。 [49] Sun Xian-kai，Lin Bi-xia，Zhu Jun-jie，Zhang yang，Fu Zhu-xi， Studies on the strain and its effect on defects in heteroepitaxial ZnO films prepared by LP-MOCVD method ， ACTA PHYSICA SINICA , 2005 ， 54 （ 6 ）： 2899-2905 。 [50] Junjie Zhu, Bixia Lin, Xiankai Sun, Ran Yao, Chaoshu Shi, Zhuxi Fu, “ Heteroepitaxy of ZnO film on Si(111) substrate using a 3C-SiC buffer layer” Thin Solid Films , Vol 478 ， 2005 ： P218-222 [51] XU Jin, ZHANG Zi-Yu, ZHANG Yang, LIN Bi-Xia, FU Zhu-Xi， Effect of Ag Doping on Optical and Electrical Properties of ZnO Thin Films ， Chinese Physics Letters, 2005, 22 (8): 2031-2034 [52] Duan Li , Lin Bixia , Fu Zhuxi , Cai J unjiang , and Zhang Ziyu , “ Undoped ZnO/ p2Si Heterojunction and Its PhotoVoltage Characteristics ”，Chinese Journal of Semiconductors， 2005,26 (10) 89- 93 [53] Xiangdong Meng, Bixia Lin, Baijie Gu, Jujie Zhu, Zhuxi Fu* , “ A simple growth route towards ZnO thin films and nanorods ” SOLID STATE COMMUNICATIONS 135 (7): 411-415 AUG 2005 [54] Lin Bi-xia，Fu Zhu-xi，Liao Gui-hong，“ Effect of Zn/O on Photoluminescence of ZnO on Si ”，Chinese Journal of Luminescence 2005 26 （ 2 ） 225 [55] Liu Ci-hui,Duan Li,Lin Bi-xia,Liu Bing-ce,Lei Huang, Cai Jun-jiang,Fu Zhu-xi，"Contact Character istics of ZnO ∶Al /p2Si",Chinese Journal of Luminescence 2005 Vol.26 No.4 P.526-530 [5 6] Yang Zhang, Ziyu Zhang, Bixia Lin, Zhuxi Fu, Jin Xu, Effects of Ag Doping on the Photoluminescence of ZnO Films Grown on Si Substretes, J. Phys. Chem. B 2005, 109(41) 19200 [57] Zheng HW , Zhu JJ , Fu ZX , Lin BX , Li XG Heteroepitaxial growth and characterization of 3C-SiC films on Si substrates using LPVCVD ， JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 21 (4): 536-540 JUL 2005 [58] Dai L , Liu SF , Fu ZX , You LP , Zhu JJ , Lin BX , Zhang JC , Qin GG ,Synthesis of GaN nanotip triangle pyramids on 3C-SiC epilayer/Si substrates via an in situ In-doping technique JOURNAL OF CHEMICAL PHYSICS 122 (10): Art. No. 104713 MAR 8 2005 [59] Yang Zhang, Bixia Lin, Zhuxi Fu, Chihui Liu, Wei Han, Strong ultraviolet emission and rectiying behavior of nanocrystalline ZnO films Optical Materials, 2005,Sep. 27 60 Luminescent and electric properties of ZNO:LI films derived by sol-gel 61. Preparation and characterization of ZnO film on Si(111) substrate with SiC buffer layer deposited by MOCVD [62] Xiangdong Meng , Bixia Lin, Liang Hong , Jujie Zhu, Xiankai Sun, Jin XU, Zhuxi Fu ,Study of the photoluminescence properties for ZnO films grown by two-step CVD, Chinese Journal of Luminescence (In Press). 2006 年 [63] Fu Zhuxi, Sun Xiankai, Zhu Junjie, Lin Bixia, Effect of Lattice Mismatch on Luminescence of ZnO/Si Hetero-structure, CHINESE JOURNAL OF SEMICOMDUCTOR, 2006, 27(2),239~243 [64] Xiangdong Meng, Dazhi Wang, Jinhua Liu, Bixia Lin, Zhuxi Fu, Effects of titania different phases on the microstructure and properties of K 2 Ti 6 O 13 nanowires, Solid State Communications ， 137 （ 2006 ）： 146-149 [65] Fabrication and electrical characterization of nanocrystalline ZnO/Si heterojunctions Author(s): Zhang Y , Xu J , Lin BX , Fu ZX , Zhong S , Liu CH , Zhang ZY Source: APPLIED SURFACE SCIENCE 252 (10): 3449-3453 MAR 15 2006 Source: SOLID STATE COMMUNICATIONS 137 (3): 146-149 JAN 2006 [66] Yang Zhang, Bixia Lin, Zhuxi Fu ， Cihui Liu, Wei Han, “Strong ultraviolet emission and rectifying behavior of nanocrystalline ZnO films”, Optical Materials, 2006, 28, 1192 [67] Yang Zhang, Jin Xu, Bixia Lin, Zhuxi Fu * , Sheng Zhong, Cihui Liu, Ziyu Zhang,“Fabrication and electrical characterization of nanocrystalline ZnO/Si heterojunctions”, Applied Surface Science 252 (2006) 3449–3453 [68] Ziyu Zhang, Yang Zhang, Li Duan, Bixia Lin, Zhuxi Fu, “ Deep ultraviolet emission of ZnO films prepared by RF magnetron sputtering at changing substrate temperature” Journal of Crystal Growth 290 (2006) 341 – 344 [69] .Sun Teng-da , Xie Jia-chun , Liang J in , Huang Li-min , Lin Bi-xia , Fu Zhu-xi“ Preparation of ZnO ohmic electrode and study of UV photoelectrical characteristics of n-ZnO/ p-Si heterojunction”journal of USTC， 2006 ， 36 （ 3 ） 328-332 [70] Guo Junfu, Xie Jiachun, Duan Li, He Guanghong, Lin Bixia and Fu Zhuxi, “Study and Fabrication of a Au/n-ZnO/p-Si Structure UV-Enhanced Phototransistor”, CHINESE JOURNAL OF SEMICOMDUCTOR， 2006 ， 27 （ 1 ） 6-9 [71] Li Duan, Bixia Lin, Weiying Zhang, Sheng Zhong, and Zhuxi Fu, “Enhancement of ultraviolet emissions from ZnO films by Ag doping”, APPLIED PHYSICS LETTERS 88 , 232110, _ 2006 _ [72] . Shu Jian-feng，Zheng Hai-wu，Lin Bi-xia，Zhu Jun-jie，Fu Zhu-xi，“Effect of carbonization on the heteroepitaxial growth of SiC films on Si substrates” ，Chinese journal of materails resarch ， 2006 ， 20 （ 3 ） 231 [73] Duan Li ，Lin Bi-xia，Yao Ran，Fu Zhu-xi，“ The properties of ZnO/SiC/Si heterostructure ”， Chinese journal of materails resarch ， 2006 ， 20 （ 3 ） 259 [74] Yao Ran, Zhu Jun-jie, Zhong Sheng, Zhu La-la, Fu Zhu-xi ， “ Effect on Radio Freqency Plasma Pretreatmen ton ZnO /Si Thin Films” JOURNAL OF SYNTHETIC CRYSTALS， 2006，35（1）91-94 [75] Yao Ran, Zhu Jun-jie, Zhong Sheng, Zhu La-la, Fu Zhu-xi ， “ Growth of ZnO Thin Films on Silicon Substrate with
|