Accept Funds since 2002£º

1, The Ministry of Science and Technology of China: " The studies on photoelectron properties of wide-gap semiconductor based on ZnO",£¤300,000

2, National Nature Science Foundation of China: "The studies on ZnO films and their photoelectron properties"£¬£¤60,000

3, National Nature Science Foundation of China: " The studies on ZnO wide- gap semiconductor for applications in photoelectron devices",£¤70,000

4, National Nature Science Foundation of China: major program: Growth of heterostructure based on ZnO and its application on photoelectron device£¬£¤750,000

5, Chinese Academic of Science: Knowledge innovation program:"The studies on third generation of wide-gap semiconductors SiC, ZnO materials and devices" sub-project " The studies on properties of photo electronic message and applications of ZnO films"£¬£¤850,000

6, Stress Research Project of USTC High Quality Constructing: The studies on ZnO wide- gap semiconductor for applications in photoelectron devices£¬£¤150,000

7,National Nature Science Foundation of China:"The preparation of ZnO UV light eradiate on Si underlay and speciality research" £¬£¤120,000

8,National Nature Science Foundation of Anhui province:"Research of ZnO heterogeneity junction photronic structure , performance and application"£¬£¤45,000

9,National Science of China offer item outlay:"The research of UV shine and laser of ZnO films"£¬£¤100,000

10,Foundation of chinese academy of sciences rector: " Preparation and idiosyncrasy investigation of photoelectric ZnO films"£¬£¤50,000

11,Surface item of National Nature Science Foundation of China: " SiC Interlayer on ZnO hetero-epitaxy on Si-wafers and photoelectricity idiosyncrasy",£¤280,000

12,Surface item of National Nature Science Foundation of China:"Research on luminesence center and excitation mechanism of ZnO films"£¬£¤250,000

13,National Nature Science Key Foundation of China:"Research on electroluminescence and defect and impurity behavior on heterosture ZnO", £¤1000,000